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| BRT 21, BRT 22, BRT 23 SITAC(R) AC Switches With Zero Voltage Switch Without Zero Voltage Switch * AC switch with zero-voltage detector * Electrically insulated between input and output circuit * Microcomputer-compatible by very low trigger current * UL-tested (file no. E 52744), code letter "J" * Available with the following options: Option 1: VDE 0884-approved Option 6: Pins in 10.16 mm spacing Option 7: Pins for sourface mounting Type BRT 21 H BRT 21 H BRT 22 H BRT 22 H BRT 22 H BRT 22 H BRT 22 H Opt. 1 7 VDRM 400 V 600 V 600 V 600 V ITRMS 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA IFT 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 3 mA 3 mA 2 mA 2 mA 2 mA 2 mA 3 mA dv/dtcr 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s 10 kV/s Marking BRT 21 H BRT 21 H BRT 22 H BRT 22 H BRT 22 H BRT 22 H BRT 22 H Ordering Code C67079-A1020-A6 C67079-A1050-A16 C67079-A1021-A6 C67079-A1051-A5 C67079-A1051-A11 C67079-A1051-A16 C67079-A1051-A17 1 + 6 400 V 1 + 6 600 V 1 + 7 600 V 600 V 600 V 800 V 800 V 800 V 800 V BRT 22 M BRT 22 M 1 BRT 23 H BRT 23 H BRT 23 H BRT 23 H 6 7 BRT 22 M C67079-A1021-A10 BRT 22 M C67079-A1051-A6 BRT 23 H BRT 23 H BRT 23 H BRT 23 H C67079-A1022-A6 C67079-A1052-A8 C67079-A1052-A11 C67079-A1052-A14 1 + 6 800 V BRT 23 M - BRT 23 M C67079-A1022-A10 Information Package 1 2 3 Anode Pin Configuration 4 A1 5 do not connect 6 A2 Cathode not Kathode 50 pcs per tube P-DIP-6 connected Semiconductor Group 1 12.96 BRT 21, BRT 22, BRT 23 Maximum Ratings, at Tj = 25 C, unless otherwise specified. Tj AC Switch Parameter Max. Power dissipation Chip or operating temperature Storage temperature Insulation test voltage 1) Symbol Value 630 -40 ...+ 100 -40 ...+ 150 5300 Unit mW C Ptot Tj Tstg VIS VRMS between input/output circuit (climate in acc. with DIN 40046, part2, Nov.74) Reference voltage in acc. with VDE 0110 b (insulation group C) Creepage tracking resistance (in acc. with DIN IEC 112/VDE 0303, part 1) Insulation resistance Vref CTI 500 600 175 VRMS VDC (group IIIa acc. to DIN VDE 0109) Ris 1012 1011 F 7.2 7.2 VIO = 500 V, TA = 25 C VIO = 500 V, TA = 100 C DIN humidity category, DIN 40 040 Creepage distance (input/output circuit) Clearance (input/output circuit) Input Circuit Parameter Param VR Continuous forward current Surge forward current, , Max. power dissipation, t 10 s s Symbol mm Value 6 20 1.5 30 Unit V mA A mW VR IF IFSM(I) Ptot Symbol BRT 21 400 300 3 600 Output Circuit Parameter Repetitive peak off-state voltage RMS on-state current Single cycle surge current (50 Hz) Max. power dissipation Semiconductor Group 2 BRT BRT 22 600 23 800 Unit V mA A mW 12.96 VDRM ITRMS ITSM(I) Ptot BRT 21, BRT 22, BRT 23 Characteristics at Tj = 25 C, unless otherwise specified. Tj Input Circuit Parameter Forward Voltage, Symbol min. Values typ. 1.1 max. 1.35 V 10 A Unit VF IR RthJA - IF = 10 mA Reverse current, VR = 6 V Thermal resistance 2) junction - ambient Output Circuit Parameter Critical rate of rise of off-state voltage Symbol min. dv/dtcr 10 5 dv/dtcrq 10 5 di/dtcr 8 2 A/s A Values typ. max. kV/s Unit 750 K/W VD = 0.67 VDRM, Tj = 25 C VD = 0.67 VDRM, Tj = 80 C Critical rate of rise of voltage at current commutation communication VD = 0.67 VDRM, Tjj = 25 C, di/dtcrq 15 A/ms T = 25 C, di/dtcrq 15 A/ms T = 80 C, di/dtcrq 15 VD = 0.67 VDRM, Tjj = 80 C, di/dtcrq 15 A/ms Critical rate of rise of on-state current Pulse current Itp VT ID tp 5 s, ff = 100 Hz, tp/dt/dt 8 A/s p 5 s, = 100 , di ditp 8 A/ms On-state voltage, IT = 300 mA Off-state current - - 2.3 V A TC = 25 C, VDRM TC = 80 C, VDRM Holding current, - 7 12 80 - 30 100 1000 500 125 K/W IH RthJA - VD = 10 V Thermal resistance 2) junction - ambient Semiconductor Group 3 12.96 BRT 21, BRT 22, BRT 23 Response Characteristics at Tj = 25 C, unless otherwise specified. Parameter Trigger current 1 Symbol min. Values typ. max. mA 0.4 0.4 2 3 Unit IFT1 type H type M VD = 6 V Trigger current 2 IFT2 Vop = 220 V, = 50 Hz,Tj = 100C tpF > 10 ms type H type M Trigger current temperature gradient Inhibit voltage, IF = IFT1 Inhibit voltage temperature gradient Off-state current in inhibit state IFT1/Tj IFT2/Tj 7 7 8 -20 50 6 9 14 12 A/K V mV/K VDINH VDINH / Tj IDINH CIO 200 A 2 pF IF = IFT1 , VDRM Capacitance between input and output circuit VR = 0 V, f = 1 kHz 1) Static air, SITAC soldered in pcb or base plate. 2) Test AC voltage in acc. with DIN 57883, June 1980. 3) The SITAC switch is soldered in pcb or base plate. 4) Termocouple measurement has to be performed potentially separated to A1 and A2. The measuring junction should be as near as possible at the case. 5) The SITAC zero voltage switch can be triggered only in the hatched area below the Tj curves. Semiconductor Group 4 12.96 BRT 21, BRT 22, BRT 23 Characteristics at Tj = 25 C, unless otherwise specified. Tj Typical input characteristics IF = (V F) Typical output characteristics IT = (V T) Current reduction ITRMS = (TA) RthJA = 125 K/W 3) Current reduction I TRMS = (TPIN5) RthJ-PIN5 = 16,5 K/W 4) Semiconductor Group 5 12.96 BRT 21, BRT 22, BRT 23 Typical trigger delay time tgd = f(IF/IFT25C) V D = 200V Power dissipation for 40 ... 60 Hz line operation Ptot = (ITRMS) Typ. inhibit current IDINH = (IF/IFT 25C) V D = 800 V Typ.static inhibit voltage limit 5) V DINHmin = (IF/IFT 25C),parameter: Tj Semiconductor Group 6 12.96 |
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